MBRS130LT3_09 Datasheet, PDF (2/6 Pages) ON Semiconductor – Schottky Power Rectifier

MBRS130LT3
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
T_L = 120°C
T_L = 110°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Value
30
1.0
2.0
40
Unit
V
A
A
Operating Junction Temperature
T_J
−65 to +125
°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance,
Junction−to−Lead
Symbol
Y_JL
Value
12
Unit
°C/W
Thermal Resistance,
Junction−to−Ambient (T_A = 25°C, Min Pad, 1 oz copper)
Junction−to−Ambient (T_A = 25°C, 1” Pad, 1 oz copper)
R_qJA
228.8
71.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 1.0 A, T_J = 25°C)
(i_F = 2.0 A, T_J = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 100°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
V_F
V
0.395
0.445
I_R
mA
1.0
10
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