MBRS130LT3_09 Datasheet, PDF (1/6 Pages) ON Semiconductor – Schottky Power Rectifier

MBRS130LT3
Schottky Power Rectifier
Surface Mount Power Package
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Features
• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T_J = 25°C)
• Small Compact Surface Mountable Package with J−Bend Leads
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 100 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
1BL3G
G
1BL3 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MBRS130LT3
SMB
2500/Tape & Reel
MBRS130LT3G
SMB
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
May, 2009 − Rev. 8
Publication Order Number:
MBRS130LT3/D