MBRJ30H100CTG Datasheet, PDF (2/6 Pages) ON Semiconductor – Power Rectifier

MBRJ30H100CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T_C = 156°C)
Per Diode
Per Device
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
Value
100
15
30
Unit
V
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T_C = 151°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I_FM
30
A
I_FSM
250
A
Operating Junction Temperature (Note 1)
Storage Temperature
T_J
+175
°C
T_stg
*65 to +175
°C
Voltage Rate of Change (Rated V_R)
dv/dt
10,000
V/ms
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
W_AVAL
200
mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
V
> 8000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
Characteristic
− Junction−to−Case
− Junction−to−Ambient
Symbol
R_qJC
R_qJA
Value
3.5
105
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i_F = 15 A, T_J = 25°C)
(i_F = 15 A, T_J = 125°C)
(i_F = 30 A, T_J = 25°C)
(i_F = 30 A, T_J = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T_J = 125°C)
(Rated DC Voltage, T_J = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
v_F
−
−
−
−
i_R
−
−
Typ
Max
Unit
V
0.76
0.80
0.64
0.67
0.88
0.93
0.76
0.80
mA
1.1
6.0
0.0008
0.0045
DEVICE ORDERING INFORMATION
Device Order Number
MBRJ30H100CTG
Package Type
TO−220FP
(Pb−Free)
Shipping^†
50 Units / Rail
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