MBRJ30H100CTG Datasheet, PDF (1/6 Pages) ON Semiconductor – Power Rectifier

MBRJ30H100CTG
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Power Rectifier
100 V, 30 A
Features and Benefits
• Low Forward Voltage: 0.67 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 30 A Total (15 A Per Diode Leg)
• This is a Pb−Free Device
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Rating: Human Body Model = 3B
Machine Model = C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
1
2, 4
3
MARKING
DIAGRAM
1
2
3
TO−220 FULLPAK]
CASE 221AH
CT SUFFIX
AYWW
B30H100G
AKA
A
= Assembly Location
Y
= Year
WW
= Work Week
B30H100 = Device Code
G
= Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
November, 2012 − Rev. P0
Publication Order Number:
MBRJ30H100CT/D