MBRAF2H100T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRAF2H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T_L = 140°C)
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz) T_L = 145°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
V_RRM
100
V
V_RWM
V_R
I_O
A
2.0
I_FRM
4.0
A
I_FSM
A
130
Storage Temperature Range
T_stg
−65 to +175
°C
Operating Junction Temperature (Note 1)
T_J
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
Y_JCL
R_qJA
Value
TBD
TBD
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i_F = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(V_R = 100 V)
3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
Symbol
v_F
I_R
Value
T_J = 25°C
T_J = 125°C
0.79
0.65
0.050
9.0
Unit
V
mA
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