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MBRAF2H100T3G Datasheet, PDF (1/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier | |||
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MBRAF2H100T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metalâtoâsilicon power diode. Stateâofâtheâart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
⢠Low Profile Package for Space Constrained Applications
⢠Rectangular Package for Automated Handling
⢠Highly Stable Oxide Passivated Junction
⢠150°C Operating Junction Temperature
⢠GuardâRing for Stress Protection
⢠These are PbâFree and HalideâFree Devices
Mechanical Charactersistics
⢠Case: Epoxy, Molded, Epoxy Meets UL 94, Vâ0
⢠Weight: 95 mg (approximately)
⢠Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
⢠Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
⢠Cathode Polarity Band
⢠Device Meets MSL 1 Requirements
⢠ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERE
100 VOLTS
SMAâFL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAAG
G
RAA = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
MBRAF2H100G SMAâFL 5000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 â Rev. 0
Publication Order Number:
MBRAF2H100/D
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