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JAN2N2222A Datasheet, PDF (2/3 Pages) ON Semiconductor – Small Signal Switching Transistor | |||
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2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = 10 mAdc)
CollectorâBase Cutoff Current
(VCB = 75 Vdc)
(VCB = 60 Vdc)
EmitterâBase Cutoff Current
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
CollectorâEmitter Cutoff Current
(VCE = 50 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector âEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base âEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALLâSIGNAL CHARACTERISTICS
Magnitude of SmallâSignal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
SmallâSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz ⤠f ⤠1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0,100 kHz ⤠f ⤠1.0 MHz )
SWITCHING (SATURATED) CHARACTERISTICS
TurnâOn Time
(Reference Figure in MILâPRFâ19500/255)
TurnâOff Time
(Reference Figure in MILâPRFâ19500/255)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ⤠2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
50
ICBO
â
â
IEBO
â
â
ICES
â
â
Vdc
10
mAdc
10
nAdc
10
mAdc
10
nAdc
50
nAdc
hFE
â
50
â
75
325
100
â
100
300
30
â
VCE(sat)
Vdc
â
0.3
â
1.0
VBE(sat)
Vdc
0.6
1.2
â
2.0
|hfe|
hfe
Cibo
Cobo
â
2.5
â
â
50
â
pF
â
25
pF
â
8.0
ton
â
35
ns
toff
â
300
ns
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