JAN2N2222A Datasheet, PDF (1/3 Pages) ON Semiconductor – Small Signal Switching Transistor

2N2222A
Small Signal Switching
Transistor
NPN Silicon
Features
• MIL−PRF−19500/255 Qualified
• Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
V_CEO
50
Collector −Base Voltage
V_CBO
75
Emitter−Base Voltage
V_EBO
6.0
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
I_C
800
P_T
500
Total Device Dissipation @ T_C = 25°C
P_T
1.0
Operating and Storage Junction
Temperature Range
T_J, T_stg
−65 to
+200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
R_qJA
325 °C/W
Thermal Resistance, Junction to Case
R_qJC
150 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2222A
JANTX2N2222A TO−18
Bulk
JANTXV2N2222A
© Semiconductor Components Industries, LLC, 2012
1
August, 2012 − Rev. 1
Publication Order Number:
2N2222A/D