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IRF830 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated
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IRF830
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0 Vdc)
(VDS = 0.8 Rated VDSS, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current, Forward
(VGSF = 20 Vdc, VDS = 0)
Gate−Body Leakage Current, Reverse
(VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.5 Adc)
On−State Drain Current (VGS = 10 V)
(VDS ≥ 6.75 Vdc)
Forward Transconductance
(VDS ≥ 6.75 Vdc, ID = 2.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (1)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 200 Vdc, ID = 2.5 Apk,
RG = 15 Ω)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = 0.8 Rated VDSS,
VGS = 10 Vdc, ID = Rated ID)
SOURCE−DRAIN DIODE CHARACTERISTICS (1)
Forward On−Voltage
Forward Turn−On Time
Reverse Recovery Time
(IS = Rated ID,
VGS = 0)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
Symbol
Min
Max
Unit
V(BR)DSS
500
IDSS
—
—
IGSS(f)
—
IGSS(r)
—
Vdc
—
mAdc
0.2
1.0
nAdc
100
nAdc
100
VGS(th)
Vdc
2.0
4.0
RDS(on)
Ohm
—
1.5
ID(on)
Adc
4.5
—
gFS
mhos
2.5
—
Ciss
Coss
Crss
—
800
pF
—
200
—
60
td(on)
—
30
ns
tr
—
30
td(off)
—
55
tf
—
30
Qg
22 (Typ)
30
nC
Qgs
12 (Typ)
—
Qgd
10 (Typ)
—
VSD
1.1 (Typ)
1.6
Vdc
ton
Limited by stray inductance
trr
450 (Typ)
—
ns
LD
nH
3.5 (Typ)
—
4.5 (Typ)
—
LS
7.5 (Typ)
—
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