IRF830 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830
Power Field Effect
Transistor
N−Channel Enhancement Mode
Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds
• Low R_DS(on) to Minimize On−Losses, Specified at Elevated
Temperature
• Rugged — SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
Drain Current
Continuous, T_C = 25°C
Continuous, T_C = 100°C
Peak, T_C = 25°C
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction−to−Case
— Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from Case
for 5 Seconds
Symbol
V_DSS
V_DGR
V_GS
I_D
P_D
T_J, T_stg
Value
Unit
500
Vdc
500
Vdc
"20
Vdc
Adc
4.5
3.0
18
75
Watts
0.6
W/°C
−55 to 150 °C
R_θJC
R_θJA
T_L
°C/W
1.67
62.5
300
°C
http://onsemi.com
TMOS POWER FET
4.5 AMPERES, 500 VOLTS
R_DS(on) = 1.5 Ω
N−Channel
D
®
G
S
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
1
Gate
2
Drain
3
Source
4
Drain
See the MTM4N45 Data Sheet for a complete set of design curves for the
product on this data sheet. Design curves of the MTP4N45 are applicable for
this product.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
ORDERING INFORMATION
Device
Package
Shipping
IRF830
TO−220AB
50 Units/Rail
Publication Order Number:
IRF830/D