ESDR0524PMUTAG Datasheet, PDF (2/3 Pages) ON Semiconductor – Transient Voltage Suppressors Low Capacitance ESD Protection for High Speed Data

ESDR0524PMUTAG
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
V_RWM I/O Pin to GND (Note 1)
5.0
V
Breakdown Voltage
V_BR
I_T = 1 mA, I/O Pin to GND
6.0
V
Reverse Leakage Current
I_R
V_RWM = 5 V, I/O Pin to GND
1.0
mA
Clamping Voltage
V_C
I_PP = 1 A, I/O Pin to GND (8 x 20 ms pulse)
15
V
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz between I/O Pins
0.3
0.4
pF
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz between I/O Pins and GND
0.5
0.8
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
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2