ESDR0502B_16 Datasheet, PDF (2/4 Pages) ON Semiconductor – Transient Voltage Suppressor

ESDR0502B, SZESDR0502B
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
I_F
V_F
P_pk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
Forward Current
Forward Voltage @ I_F
Peak Power Dissipation
Capacitance @ V_R = 0 and f = 1.0 MHz
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted, V_F = 1.1 V Max. @ I_F = 10 mA for all types)
Device*
V_BR (V)
C (pF),
V_RWM I_R (mA)
@ I_T
uni−directional
(V) @ V_RWM (Note 2) I_T
(Note 3)
Device
Marking Max Max
Min
mA Typ
Max
C (pF),
bi−directional
(Note 4)
Typ
Max
V_C (V)
@ I_PP = 1 A
(Note 5)
Max
V_C
Per
IEC61000−
4−2
(Note 6)
ESDR0502B
AD
5.0
1.0
5.8
1.0 0.5
0.9
0.25 0.45
15
Figures 1
and 2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Include SZ−prefix devices where applicable.
2. V_BR is measured with a pulse test current I_T at an ambient temperature of 25°C.
3. Uni−directional capacitance at f = 1 MHz, V_R = 0 V, T_A = 25°C (pin1 to pin 3; pin 2 to pin 3).
4. Bi−directional capacitance at f = 1 MHz, V_R = 0 V, T_A = 25°C (pin1 to pin 2).
5. Surge current waveform per Figure 5.
6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
www.onsemi.com
2