ESDR0502B_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – Transient Voltage Suppressor

ESDR0502B, SZESDR0502B
Transient Voltage Suppressor
ESD Protection Diodes with Ultra−Low
Capacitance
The ESDR0502B is designed to protect voltage sensitive
components from damage due to ESD in applications that require ultra
low capacitance to preserve signal integrity. Excellent clamping
capability, low leakage and fast response time are combined with an
ultra low diode capacitance of 0.5 pF to provide best in class
protection from IC damage due to ESD. The small SC−75 package is
ideal for designs where board space is at a premium. The ESDR0502B
can be used to protect two uni−directional lines or one bi−directional
line. When used to protect one bi−directional line, the effective
capacitance is 0.25 pF. Because of its low capacitance, it is well suited
for protecting high frequency signal lines such as USB2.0 high speed
and antenna line applications.
Specification Features:
• Low Capacitance 0.5 pF Typical
• Low Clamping Voltage, Low Leakage
• Small Body Outline Dimensions:
0.063” x 0.063” (1.60 mm x 1.60 mm)
• Stand−off Voltage: 5 V
• Response Time is Typically < 1.0 ns
• IEC61000−4−2 Level 4 ESD Protection
ISO10605 330 pF/2 kW ±17 kV (Contact)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
±11
kV
±15
Peak Surge Power (8 x 20 ms)
Peak Surge Current (8 x 20 ms)
Total Power Dissipation on FR−5 Board
(Note 1) @ T_A = 25°C
Storage Temperature Range
Junction Temperature Range
Lead Solder Temperature − Maximum
(10 Second Duration)
P_pk
20
W
I_pp
2.0
A
P_D
150
mW
T_stg
−55 to +150 °C
T_J
−55 to +150 °C
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
www.onsemi.com
PIN 1. CATHODE ¹
2. CATHODE
3
3. ANODE
2
3
12
SC−75
CASE 463
STYLE 4
MARKING
DIAGRAM
AD M G
G
1
AD = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping^†
ESDR0502BT1G
SC−75 3000/Tape &
(Pb−Free)
Reel
SZESDR0502BT1G SC−75 3000/Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See Application Note AND8308/D for further
description of survivability specs.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
December, 2016 − Rev. 4
Publication Order Number:
ESDR0502B/D