ESDM3031 Datasheet, PDF (2/7 Pages) ON Semiconductor – ESD Protection Diode

ESDM3031
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_PP
V_C V_BR V_RWM II_RT
II_RT
V_RWM V_BR V_C ^V
I_PP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
V_RWM
3.3
V
Breakdown Voltage (Note 2)
V_BR
I_T = 1 mA
4.4
6.2
V
Reverse Leakage Current
I_R
V_RWM = 3.3 V
0.1
mA
Clamping Voltage (Note 3)
V_C
I_PP = 5 A
6.3
V
Clamping Voltage (Note 3)
V_C
I_PP = 10 A
8.0
V
Peak Pulse Current (Note 3)
I_PP
t_P = 8/20 ms
11
A
Clamping Voltage
V_C
I_PP = 16 A
IEC 61000−4−2 Level 4 equivalent
7.2
V
TLP (Note 4)
(±8 kV Contact, ±15 kV Air)
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz
20
pF
Dynamic Resistance
R_DYN TLP Pulse
0.13
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at T_A = 25°C, per IEC61000−4−5 waveform.
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z₀ = 50 W, t_p = 100 ns, t_r = 4 ns, averaging window; t₁ = 30 ns to t₂ = 60 ns.
40
35
30
25
20
15
10
5
0
−5
−20 0
20 40 60 80 100 120 140
TIME (ns)
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
5
0
−5
−10
−15
−20
−25
−30
−35
−40
−20 0
20 40 60 80 100 120 140
TIME (ns)
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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