ESD9R3.3S Datasheet, PDF (2/4 Pages) ON Semiconductor – Transient Voltage Suppressors

ESD9R3.3S, SZESD9R3.3S
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR Breakdown Voltage @ I_T
I_T
Test Current
I_F
Forward Current
V_F
Forward Voltage @ I_F
P_pk
Peak Power Dissipation
C
Max. Capacitance @ V_R = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted, V_F = 1.0 V Max. @ I_F = 10 mA for all types)
I_R (nA) @ 1 V
T_A = 05C
V_C (V)
V_RWM
to 505C
V_BR (V) @ I_T
@ I_PP = 1 A
(V)
(Note 4)
(Note 2)
I_T
C (pF)
(Note 5)
V_C
Device
Device*
Marking Max
Max
Per IEC61000−4−2
Min
mA Typ Max
Max
(Note 3)
ESD9R3.3ST5G
J**
3.3
1.0
4.8
1.0 0.5 0.9
7.8
Figures 1 and 2
See Below
*Includes SZ−prefix device where applicable.
**Rotated 270°.
2. V_BR is measured with a pulse test current I_T at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Limits over temperature are guaranteed by design, not production tested.
5. V_C measured using pulse waveform in Figure 5.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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