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EMZ1DXV6T1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual General Purpose Transistors
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EMZ1DXV6T1, EMZ1DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min Typ
Q1: PNP
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 4)
(IC = −50 mAdc, IB = −5.0 mAdc)
V(BR)CBO −60 −
V(BR)CEO −50 −
V(BR)EBO −6.0 −
ICBO
−
−
IEBO
−
−
VCE(sat)
−
−
DC Current Gain (Note 4)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
120 −
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
fT
− 140
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
Q2: NPN
COB
− 3.5
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0)
Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage(2)
(IC = 50 mAdc, IB = 5.0 mAdc)
DC Current Gain(2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
V(BR)CBO 60
−
V(BR)CEO 50
−
V(BR)EBO 7.0
−
ICBO
−
−
IEBO
−
−
VCE(sat)
−
−
hFE
120 −
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
− 180
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
COB
− 2.0
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Max
−
−
−
−0.5
−0.5
−0.5
560
−
−
−
−
−
0.5
0.5
0.4
560
−
−
Unit
Vdc
Vdc
Vdc
nA
mA
Vdc
−
MHz
pF
Vdc
Vdc
Vdc
mA
mA
Vdc
−
MHz
pF
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