EMZ1DXV6T1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Dual General Purpose Transistors

EMZ1DXV6T1,
EMZ1DXV6T5
Product Preview
Dual General Purpose
Transistors
NPN/PNP Dual (Complimentary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
• Lead−Free Solder Plating
• Low V_CE(SAT), t0.5 V
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation T_A = 25°C
P_D
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
R_qJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation T_A = 25°C
P_D
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad.
R_qJA
T_J, T_stg
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
654
123
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
3Z D
3Z = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
EMZ1DXV6T1
SOT−563 4 mm Pitch
4000/Tape & Reel
EMZ1DXV6T5
SOT−563 2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. P0
Publication Order Number:
EMZ1DXV6/D