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EMT2DXV6T5 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual General Purpose Transistor
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EMT2DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
ICBO
−
−
−0.5
nA
Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0)
IEBO
−
−
−0.5
mA
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
−
Vdc
−
−0.5
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
−
120
−
560
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
fT
MHz
−
140
−
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
COB
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
−
3.5
−
pF
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