EMT2DXV6T5 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual General Purpose Transistor

EMT2DXV6T5
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
• Lead−Free Solder Plating
• Low V_CE(SAT), < 0.5 V
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation T_A = 25°C
P_D
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
R_qJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation T_A = 25°C
P_D
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad.
R_qJA
T_J, T_stg
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
(2)
(1)
Q₂
Q₁
(4) (5)
(6)
654
123
MARKING
DIAGRAM
3M D
SOT−563
CASE 463A
Style 2
3M = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
EMT2DXV6T5
Package
Shipping†
SOT−563 2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 0
Publication Order Number:
EMT2DXV6T5/D