EMT1DXV6_14 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual General Purpose Transistor

EMT1DXV6
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(I_C = −50 mAdc, I_E = 0)
Collector−Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
V_(BR)CBO
−60
−
V_(BR)CEO
−50
−
−
Vdc
−
Vdc
Emitter−Base Breakdown Voltage
(I_E = −50 mAdc, I_E = 0)
Collector−Base Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
Emitter−Base Cutoff Current
(V_EB = −5.0 Vdc, I_B = 0)
V_(BR)EBO
−6.0
−
−
Vdc
I_CBO
−
−
−0.5
nA
I_EBO
−
−
−0.5
mA
Collector−Emitter Saturation Voltage (Note 2)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
V_CE(sat)
Vdc
−
−
−0.5
DC Current Gain (Note 2)
(V_CE = −6.0 Vdc, I_C = −1.0 mAdc)
h_FE
−
120
−
560
Transition Frequency
(V_CE = −12 Vdc, I_C = −2.0 mAdc, f = 30 MHz)
f_T
MHz
−
140
−
Output Capacitance
(V_CB = −12 Vdc, I_E = 0 Adc, f = 1 MHz)
C_OB
−
3.5
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Device
EMT1DXV6T1G
Package
SOT−563
(Pb−Free)
Shipping^†
4000 / Tape & Reel
NSVEMT1DXV6T1G*
SOT−563
(Pb−Free)
4000 / Tape & Reel
EMT1DXV6T5G
SOT−563
(Pb−Free)
8000 / Tape & Reel
NSVEMT1DXV6T5G*
SOT−563
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
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