EMT1DXV6_14 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual General Purpose Transistor

EMT1DXV6
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
• Lead−Free Solder Plating
• Low V_CE(SAT), t0.5 V
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−60
−50
−6.0
−100
V
V
V
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
mW
357
(Note 1)
mW/°C
2.9
(Note 1)
Thermal Resistance,
Junction-to-Ambient
R_qJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
mW
500
(Note 1)
mW/°C
4.0
(Note 1)
Thermal Resistance,
Junction-to-Ambient
R_qJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T_J, T_stg − 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
3T M G
G
1
3T = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 2
Publication Order Number:
EMT1DXV6T1/D