EMT1DXV6T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual General Purpose Transistor

EMT1DXV6T1, EMT1DXV6T5
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Collector−Base Breakdown Voltage
(I_C = −50 mAdc, I_E = 0)
Collector−Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
Emitter−Base Breakdown Voltage
(I_E = −50 mAdc, I_E = 0)
Collector−Base Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
Emitter−Base Cutoff Current
(V_EB = −5.0 Vdc, I_B = 0)
Collector−Emitter Saturation Voltage (Note 2)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
DC Current Gain (Note 2)
(V_CE = −6.0 Vdc, I_C = −1.0 mAdc)
Transition Frequency
(V_CE = −12 Vdc, I_C = −2.0 mAdc, f = 30 MHz)
Output Capacitance
(V_CB = −12 Vdc, I_E = 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
C_OB
Min
Typ
Max
Unit
−60
−
−
Vdc
−50
−
−
Vdc
−6.0
−
−
Vdc
−
−
−0.5
nA
−
−
−0.5
mA
Vdc
−
−
−0.5
−
120
−
560
MHz
−
140
−
−
3.5
−
pF
ORDERING INFORMATION
Device
Package
Shipping^†
EMT1DXV6T1
SOT−563*
4000 Units / Tape & Reel
EMT1DXV6T1G
SOT−563*
4000 Units / Tape & Reel
EMT1DXV6T5
SOT−563*
8000 Units / Tape & Reel
EMT1DXV6T5G
SOT−563*
8000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
http://onsemi.com
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