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EMT1DXV6T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual General Purpose Transistor | |||
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EMT1DXV6T1,
EMT1DXV6T5
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOTâ563 which is designed for low
power surface mount applications.
Features
⢠LeadâFree Solder Plating
⢠Low VCE(SAT), t0.5 V
⢠These are PbâFree Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector âEmitter Voltage
Collector âBase Voltage
Emitter âBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
â60
â50
â6.0
â100
V
V
V
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
mW
357
(Note 1) mW/°C
2.9
(Note 1)
Thermal Resistance,
Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
mW
500
(Note 1) mW/°C
4.0
(Note 1)
Thermal Resistance,
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg â55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FRâ4 @ Minimum Pad.
http://onsemi.com
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
6
1
SOTâ563
CASE 463A
STYLE 1
MARKING DIAGRAM
3T M G
G
1
3T = Specific Device Code
M = Month Code
G = PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 â Rev. 1
Publication Order Number:
EMT1DXV6T1/D
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