EFC4618R-P Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

EFC4618R-P
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Forward Source-to-Source Voltage
V(BR)SSS
ISSS
IGSS
VGS(off)
| yfs |
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
td(on)
tr
td(off)
tf
Qg
VF(S-S)
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
See specified Test Circuit. Test Circuit 7
VSS=10V, VGS=4.5V, IS=6A
IS=3A, VGS=0V
Test Circuit 6
Ratings
Unit
min
typ
max
24
V
1
mA
±10
mA
0.5
1.3
V
6.5
S
13.5
19.8
23 mW
14
20.5
24 mW
14.5
21
25.5 mW
14.9
23
30 mW
18.5
27
35 mW
200
ns
815
ns
1840
ns
1770
ns
25.4
nC
0.76
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
EFC4618R-P-TR
Package
EFCP
Shipping
5,000pcs./reel
memo
Pb-Free and Halogen Free
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
Test Circuit 2
IGSS(+) / (--)
S2
G2
G1
S1
Test Circuit 3
VGS(off)
S2
G2
IT11565
G1
S1
Test Circuit 4
| yfs |
S2
G2
IT11566
10V 1mA
G1
G1
S1
IT11567
S1
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
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