EFC4618R-P Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

EFC4618R-P
Power MOSFET
24V, 6A, 23mΩ, Dual N-Channel
www.onsemi.com
Features
• _{2.5V Drive}
• _{Best Suited for LiB Charging and Discharging Switch}
• _{Common-drain Type}
• _{ESD Diode - Protected Gate}
• _{Pb-Free, Halogen Free and RoHS Compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
6
A
60
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7069-001
1.81
43
EFC4618R-P-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TR
Marking
12
0.65
12
43
0.3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
EFCP1818-4CC-037
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
October 2014 - Rev. 2
TR
Electrical Connection
1
Rg
2
Rg
3
Rg=200Ω
4
FT
LOT No.
Publication Order Number :
EFC4618R-P/D