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DAP202U Datasheet, PDF (2/6 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes
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DAP222, DAP202U
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Reverse Voltage Leakage Current
IR
Forward Voltage
VF
Reverse Breakdown Voltage
VR
Diode Capacitance
CD
Reverse Recovery Time DAP222 trr(2)
DAP202U ttt(3)
1. t = 1 mS
2. trr Test Circuit for DAP222 in Figure 4.
3. trr Test Circuit for DAP202U in Figure 5.
VR = 70 V
IF = 100 mA
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR
Min
Max
Unit
—
0.1
mAdc
—
1.2
Vdc
80
—
Vdc
—
3.5
pF
—
4.0
ns
−
10.0
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
TA = 85°C
1.0
10
TA = −40°C
0.1
1.0
TA = 25°C
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2
0
TA = 25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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