DAP202U Datasheet, PDF (1/6 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes

DAP222, DAP202U
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323 package.
Features
• Fast t_rr
• Low C_D
• Available in 8 mm Tape and Reel
• Pb−Free Package is Available
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
V_R
80
Vdc
Peak Reverse Voltage
V_RM
80
Vdc
Forward Current
I_F
100
mAdc
Peak Forward Current
I_FM
300
mAdc
Peak Forward Surge Current
I_FSM(1)
2.0
Adc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
P_D
150
mW
T_J
150
°C
T_stg
−55 ~ + 150
°C
http://onsemi.com
ANODE
3
1
2
CATHODE
3
2
1
SC−75
CASE 463
STYLE 3
MARKING
DIAGRAMS
P9
3
1
2
NB
SC−70
CASE 419
ORDERING INFORMATION
Device
DAP222
DAP202U
DAP222T1
DAP222T1G
Package
SC−75
SC−70
SC−75
SC−75
(Pb−Free)
Shipping^†
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 4
Publication Order Number:
DAP222/D