DAN222M3T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Common Cathode Silicon Dual Switching Diode

DAN222M3T5G
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current (Note 2)
I_R
V_R = 70 V
−
0.1
mA
Forward Voltage
V_F
I_F = 100 mA
−
1.2
V
Reverse Breakdown Voltage
V_R
I_R = 100 mA
80
−
V
Diode Capacitance
C_D
V_R = 6.0 V, f = 1.0 MHz
−
3.5
pF
Reverse Recovery Time (Note 3)
t_rr
I_F = 5.0 mA, V_R = 6.0 V,
−
4.0
ns
R_L = 100 W, I_rr = 0.1 I_R
2. For each diode while other is not forward biased.
3. t_rr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
+150°C
10
1.0
+125°C
1.0
T_A = 150°C
0.1
125°C
+85°C
0.1
+55°C
0.01
25°C - 40°C - 55°C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_F, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
0
+25°C
10 20 30 40 50 60 70 80
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0
5
10
15
20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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