DAN222M3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Common Cathode Silicon Dual Switching Diode

DAN222M3T5G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−723 package which is designed for low
power surface mount applications, where board space is at a premium.
Features
• Fast t_rr
• Low C_D
• Available in 4 mm Tape and Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
V_R
80
V
Peak Reverse Voltage
V_RM
80
V
Forward Current
I_F
100
mA
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
P_D
260
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1.0 mS.
http://onsemi.com
CATHODE
3
1
2
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
N9 M
2
STYLE 3
1
N9 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
DAN222M3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
January, 2013 − Rev. 6
Publication Order Number:
DAN222M3/D