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| DAN222G Datasheet, PDF (2/4 Pages) ON Semiconductor – Common Cathode Silicon Dual Switching Diode | |||
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DAN222G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C)
Characteristic
Symbol
Condition
Min
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
2. trr Test Circuit on following page.
IR
VR = 70 V
--
VF
IF = 100 mA
--
VR
IR = 100 mA
80
CD
VR = 6.0 V, f = 1.0 MHz
--
trr (Note 2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
--
Max Unit
0.1
mAdc
1.2
Vdc
--
Vdc
3.5
pF
4.0
ns
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
TA = 85ï°C
1.0
10
TA = -- 40ï°C
0.1
1.0
TA = 25ï°C
0.01
TA = 150ï°C
TA = 125ï°C
TA = 85ï°C
TA = 55ï°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2
0
TA = 25ï°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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