DAN222G Datasheet, PDF (1/4 Pages) ON Semiconductor – Common Cathode Silicon Dual Switching Diode

DAN222G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT--416/SC--75 package which is designed
for low power surface mount applications, where board space is at a
premium.
Features
 Fast t_rr
 Low C_D
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25C)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current (Note 1)
THERMAL CHARACTERISTICS
V_R
V_RM
I_F
I_FM
I_FSM
80
Vdc
80
Vdc
100
mAdc
300
mAdc
2.0
Adc
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature Range
P_D
150
mW
T_J
150
C/W
T_stg
--55 to
C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
http://onsemi.com
CATHODE
3
1
2
ANODE
1
SC--75/SOT--416
CASE 463
STYLE 3
MARKING DIAGRAM
N9 M G
G
1
N9
= Specific Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
DAN222G
SC--75/SOT--416 3000/Tape & Reel
(Pb--Free)
DAN222T1G SC--75/SOT--416 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 6
Publication Order Number:
DAN222/D