DA121TT1 Datasheet, PDF (2/8 Pages) ON Semiconductor – Silicon Switching Diode

DA121TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
—
715
—
866
—
1000
—
1250
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
IR
µA
—
1.0
—
50
—
30
CD
—
2.0
pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
trr
—
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
QS
—
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
—
1.75
V
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