DA121TT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon Switching Diode

DA121TT1
Preferred Device
Advance Information
Silicon Switching Diode
MAXIMUM RATINGS (TA = 25°C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board ⁽¹⁾
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient ⁽¹⁾
Total Device Dissipation,
FR–4 Board ⁽²⁾
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient ⁽²⁾
Junction and Storage
Temperature Range
(1) FR–4 @ Minimum Pad
(2) FR–4 @ 1.0 × 1.0 Inch Pad
Symbol
VR
IF
IFM(surge)
Symbol
PD
R_θJA
PD
R_θJA
TJ, Tstg
Max
80
200
500
Max
225
1.8
555
360
2.9
345
–55 to
+150
Unit
V
mA
mA
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
3
CATHODE
1
ANODE
3
2
1
CASE 463
SOT–416/SC–75
STYLE 2
DEVICE MARKING
6A
ORDERING INFORMATION
Device
Package
Shipping
DA121TT1
SOT–416 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 1
Publication Order Number:
DA121TT1/D