CPH6354 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH6354
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--4A
IS=--4A, VGS=0V
Value
Unit
min
typ
max
--60
V
--1
mA
±10
mA
--1.2
--2.6
V
4.8
S
77
100 mW
96
135 mW
103
145 mW
600
pF
60
pF
50
pF
5.8
ns
12
ns
78
ns
40
ns
14
nC
1.6
nC
3.4
nC
--0.84
--1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10ms
D.C.≤1%
G
VDD= --30V
ID= --2A
RL=15Ω
D
VOUT
CPH6354
P.G
50Ω
S
ORDERING INFORMATION
Device
CPH6354-TL-H
CPH6354-TL-W
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb-Free and Halogen Free
www.onsemi.com
2