CPH6354 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH6354
Power MOSFET
–60V, _100mΩ, –4A, _{Single P-Channel}
www.onsemi.com
Features
• _{ON-resistance RDS(on)1=77mW(typ.)}
• _{4V Drive}
• _{ESD Diode - Protected Gate}
• _{Pb-Free, Halogen Free and RoHS Compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW≤10ms, duty cycle≤1%
When mounted on ceramic substrate (1500mm²Ã—0.8mm)
Value
Unit
--60
V
±20
V
--4
A
--16
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (1500mm²Ã—0.8mm)
Symbol
R_θJA
Value
78.1
Unit
°C/W
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
CPH6354-TL-H
0.15
CPH6354-TL-W
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
TL
Electrical Connection
1, 2, 5, 6
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November 2014 - Rev. 2
4
Publication Order Number :
CPH6354/D