CPH6021 Datasheet, PDF (2/12 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er

CPH6021
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
| S21e |²
NF
Conditions
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=30mA
VCE=5V, IC=30mA, f=1GHz
VCE=5V, IC=10mA, f=1GHz
Ratings
Unit
min
typ
max
1.0
μA
1.0
μA
60
150
8
10
GHz
10
14
dB
1.2
1.8 dB
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
CPH6021-TL-H
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
100
90
80
70
60
50
40
30
20
10
0
0
1000
7
5
3
2
100
7
5
3
2
10
1.0
IC -- VCE
1000^μA
900μA
800μA
700μA
600μA
500μA
400μ^A
300μ^A
200μA
100μA
IB=0μA
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE -- V IT16262
hFE -- IC
VCE=5V
23
5 7 ₁₀
23
Collector Current, IC -- mA
5 7 ₁₀₀
IT16264
100
VCE=5V
90
80
70
60
50
40
IC -- VBE
30
20
10
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V IT16263
Cob -- VCB
10
f=1MHz
7
5
3
2
1.0
7
5
3
2
0.1
0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector-to-Base Voltage, VCB -- V IT16265
No. A1910-2/12