CPH6021 Datasheet, PDF (1/12 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er

Ordering number : ENA1910A
CPH6021
RF Transistor
12V, 100mA, fT=10GHz, NPN Single CPH6
http://onsemi.com
Features
• _{Low-noise use}
: NF=1.2dB typ (f=1GHz)
• _{High cut-off frequency : fT=10GHz typ (VCE=5V)}
• _{High gain}
: |S21e|²=14dB typ (f=1GHz)
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
12
V
2
V
100 mA
700 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-002
2.9
654
0.15 ^CPH6021-TL-H
0.05
12
0.95
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
CPH6
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
62712 TKIM/20911AB TKIM TC-00002543 No. A1910-1/12