CPH3910 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – N-Channel Junctin Silicon FET High-Frequency Low-Noise Amplifi er Applications

CPH3910
Electrical Characteristics at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
NF
Conditions
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
VDS=5V, ID=100μA
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=100MHz
Ordering Information
Device
CPH3910-TL-E
Package
CPH3
Shipping
3,000pcs./reel
Ratings
Unit
min
typ
max
--25
V
--1.0 nA
--0.6
--1.2
--1.8
V
20
40 mA
30
40
mS
6.0
pF
2.3
pF
2.1
2.8
dB
memo
Pb Free
ID -- VDS
30
25
VGS=0V
20
--0.2V
15
10
5
0
0
0.5
1.0
1.5
Drain-to-Source Voltage, VDS -- V
ID -- VGS
50
VDS=5V
45
--0.4V
--0.6V
--0.8V
--1.0V
2.0
IT16687
40
35
30
25
20
15
10
5
0
--2.0
--1.5
--1.0
--0.5
0
0.5
Gate-to-Source Voltage, VGS -- V IT16689
ID -- VDS
40
35
VGS=0V
30
25
--0.2V
20
--0.4V
15
10
5
0
0
2
4
6
8
Drain-to-Source Voltage, VDS -- V
50
VDS=5V
ID -- VGS
45
--0.6V
--0.8V
--1.0V
10
IT16688
40
35
30
25
20
15
10
5
0
--2.0
--1.5
--1.0
--0.5
0
0.5
Gate-to-Source Voltage, VGS -- V IT16690
No. A1965-2/6