CPH3910 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Junctin Silicon FET High-Frequency Low-Noise Amplifi er Applications

Ordering number : ENA1965A
CPH3910
N-Channel JFET
25V, 20 to 40mA, 40mS, CPH3
http://onsemi.com
Applications
• _{For AM tuner RF amplification}
• _{Low noise amplifier}
Features
• _{VGDS: --25V max.}
• _{| yfs |: 40mS typ.}
• _{Ciss: 6.0pF typ.}
• _{NF: 2.1dB typ.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
25
V
--25
V
10 mA
50 mA
400 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7015A-007
2.9
3
1
0.95
2
0.4
CPH3910-TL-E
0.15
0.05
1 : Source
2 : Drain
3 : Gate
CPH3
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
3
12
Semiconductor Components Industries, LLC, 2013
August, 2013
61312 TKIM/21512AC TKIM TC-00002694 No. A1965-1/6