CPH3360 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH3360
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=−1mA, VGS=0V
VDS=−30V, VGS=0V
VGS=±16V, VDS=0V
VDS=−10V, ID=−1mA
VDS=−10V, ID=−0.8A
ID=−0.8A, VGS=−10V
ID=−0.4A, VGS=−4.5V
ID=−0.4A, VGS=−4V
−30
V
−1 μA
±10 μA
−1.2
−2.6 V
1.3
S
233
303 mΩ
380
532 mΩ
441
617 mΩ
82
pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=−10V, f=1MHz
22
pF
16
pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
4.0
ns
3.3
ns
12
ns
5.4
ns
2.2
nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs
VDS=−15V, VGS=−10V, ID=−1.6A
Qgd
0.36
nC
0.49
nC
Forward Diode Voltage
VSD
IS=−1.6A, VGS=0V
−0.9
−1.5 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --15V
ID= --0.8A
RL=18.75Ω
D
VOUT
CPH3360
P.G
50Ω
S
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