CPH3360 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH3360
Power MOSFET
–30V, 303mΩ, –1.6A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• High Speed Switching
• 4V drive
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
−1.6
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−6.4
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
0.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
138.8 °C/W
www.onsemi.com
VDSS
−30V
RDS(on) Max
303mΩ@ −10V
532mΩ@ −4.5V
617mΩ@ −4V
ID Max
−1.6A
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL
MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
July 2015 - Rev. 2
Publication Order Number :
CPH3360/D