CPH3351 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
CPH3351
Conditions
ID=−1mA, VGS=0V
VDS=−60V, VGS=0V
VGS=±16V, VDS=0V
VDS=−10V, ID=−1mA
VDS=−10V, ID=−1A
ID=−1A, VGS=−10V
ID=−0.5A, VGS=−4.5V
ID=−0.5A, VGS=−4V
VDS=−20V, f=1MHz
See specified Test Circuit
VDS=−30V, VGS=−10V, ID=−1.8A
IS=−1.8A, VGS=0V
min
−60
Value
typ
−1.2
2.7
190
235
250
262
29
19
5.1
5.4
34
19
6.0
0.83
1.3
−0.82
Unit
max
V
−1 μA
±10 μA
−2.6
V
S
250 mΩ
330 mΩ
350 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
−1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --30V
ID= --1A
RL=30Ω
D
VOUT
CPH3351
P.G
50Ω
S
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