CPH3351 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH3351
Power MOSFET
−60V, 250mΩ, −1.8A, Single P-Channel
www.onsemi.com
Features
• Low On-Resistance
• 4V Drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
−60
V
±20
V
−1.8
A
−7.2
A
1.0
W
150
°C
−55 to +150
°C
VDSS
−60V
RDS(on) Max
250mΩ@ −10V
330mΩ@ −4.5V
350mΩ@ −4V
ID _Max
−1.8A
Electrical Connection
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
Packing Type : TL Marking
Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
Junction to Ambient
When mounted on ceramic substrate
R_θJA
125
°C/W
TL
(900mm² × 0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 2
Publication Order Number :
CPH3351/D