CPH3145 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

CPH3145/CPH3245
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(−)40V, IE=0A
(−)1 μA
Emitter Cutoff Current
IEBO
VEB=(−)4V, IC=0A
(−)1 μA
DC Current Gain
hFE
VCE=(−)2V, IC=(−)100mA
200
560
Gain-Bandwidth Product
fT
VCE=(−)10V, IC=(−)300mA
420
MHz
Output Capacitance
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Cob
VCE(sat)
VBE(sat)
VCB=(−)10V, f=1MHz
IC=(−)1A, IB=(−)50mA
(16)8
pF
(−165)130 (−330)260 mV
(−)0.9
(−)1.2 V
Collector to Base Breakdown
Voltage
V(BR)CBO IC=(−)10μA, IE=0A
(−50)80
V
Collector to Emitter Breakdown
Voltage
V(BR)CES IC=(−)100μA, RBE=0Ω
(−50)80
V
Collector to Emitter Breakdown
Voltage
V(BR)CEO ^{IC=(−)1mA, RBE=∞}
(−)50
V
Emitter to Base Breakdown Voltage V(BR)EBO IE=(−)10μA, IC=0A
(−)6
V
Turn-ON Time
ton
(35)35
ns
Storage Time
tstg
See specified Test Circuit
(200)330
ns
Fall Time
tf
(24)40
ns
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
OUTPUT
RL
50Ω
+
100μF
VBE=5V
IC= --10IB1=10IB2= --0.7A
CPH3145
+
470μF
VCC= --25V
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE= --5V
IC=10IB1= --10IB2=0.7A
CPH3245
OUTPUT
RL
+
470μF
VCC=25V
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