CPH3145 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

CPH3145/CPH3245
Low VCE (sat) Bipolar Transistor
(PNP)NPN, (–)50V, (–)2A
Features
• Adoption of MBIT Process
• Large Current Capacity
• Low Collector to Emitter Saturation Voltage
• High Speed Switching
• Ultrasmall Package Facilitates Miniaturization in End Products
(mounting height : 0.9mm)
• High Allowable Power Dissipation
Typical Applications
• Relay Drivers
• Lamp Drivers
• Motor Drivers
• Flash
SPECIFICATIONS ( ) : CPH3145
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
(−50)80
V
Collector to Emitter Voltage
VCES
(−50)80
V
Collector to Emitter Voltage
VCEO
(−)50
V
Emitter to Base Voltage
VEBO
(−)6
V
Collector Current
IC
Collector Current (Pulse)
ICP
Base Current
IB
Collector Dissipation
When mounted on ceramic substrate
PC
(600mm² × 0.8mm)
(−)2
A
(−)4
A
(−)400 mA
0.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
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ELECTRICAL CONNECTION
PNP
NPN
3
3
1
1
CPH3145
2
CPH3245 ²
1 : Base
2 : Emitter
3 : Collector
PACKING TYPE : TL
TL
MARKING
CPH3145
CPH3245
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
June 2015 - Rev. 2
Publication Order Number :
CPH3145_CPH3245/D