CM1205_11 Datasheet, PDF (2/5 Pages) ON Semiconductor – 8-Channel ESD Protection Array in Chip Scale Package

CM1205
PACKAGE / PINOUT DIAGRAMS
Orientation
Marking
TOP VIEW
(Bumps Down View)
+
120508
BOTTOM VIEW
(Bumps Up View)
B1 B2 B3 B4 B5
A1 A2 A3 A4 A5
CM1205−08
10−bump CSP Package
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
−40 to +85
Units
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Sym-
bol
Parameter
Conditions
Min Typ
Max
V_REV
I_LEAK
V_SIG
Reverse Standoff Voltage
Leakage Current
Signal Clamp Voltage
Positive Clamp
Negative Clamp
I_DIODE= 10 mA
V_IN= 3.3 V DC
I_LOAD= 10mA
6.0
5.6 6.8
−1.2 −0.8
100
8.0
−0.4
V_ESD In−system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL−STD−883, Method
±30
3015
b) Contact Discharge per IEC 61000−4−2 Level 4
±25
V_CL Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Note 2
Positive Transients
+12
Negative Transients
−8
C Channel Capacitance
At 2.5 V DC, f = 1 MHz
39
47
1. T_A = 25 °C unless otherwise specified. GND in this document refers to the lower supply voltage.
2. ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground.
Units
V
nA
V
kV
V
pF
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