CAT93C86B Datasheet, PDF (2/14 Pages) ON Semiconductor – 16-Kb Microwire Serial EEPROM

CAT93C86B
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
−65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Note 3) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Block Mode, V_CC = 5 V, 25°C.
Table 3. D.C. OPERATING CHARACTERISTICS
(V_CC = +1.8 V to +5.5 V, T_A = −40°C to +125°C, V_CC = +1.65 V to +5.5 V, T_A = −20°C to +85°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
I_CC1
I_CC2
I_SB1
I_SB2
I_LI
I_LO
V_IL1
V_IH1
V_IL2
V_IH2
V_OL1
V_OH1
V_OL2
V_OH2
Supply Current (Write)
Supply Current (Read)
Standby Current
(x8 Mode)
Standby Current
(x16 Mode)
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Write, V_CC = 5.0 V
Read, DO open, f_SK = 2 MHz, V_CC = 5.0 V
V_IN = GND or V_CC
CS = GND, ORG = GND
T_A = −40°C to +85°C
T_A = −40°C to +125°C
V_IN = GND or V_CC
CS = GND,
ORG = Float or V_CC
T_A = −40°C to +85°C
T_A = −40°C to +125°C
V_IN = GND to V_CC
T_A = −40°C to +85°C
T_A = −40°C to +125°C
V_OUT = GND to V_CC
CS = GND
T_A = −40°C to +85°C
T_A = −40°C to +125°C
4.5 V ≤ V_CC < 5.5 V
4.5 V ≤ V_CC < 5.5 V
1.65 V ≤ V_CC < 4.5 V
1.65 V ≤ V_CC < 4.5 V
4.5 V ≤ V_CC < 5.5 V, I_OL = 3 mA
4.5 V ≤ V_CC < 5.5 V, I_OH = −400 mA
1.65 V ≤ V_CC < 4.5 V, I_OL = 1 mA
1.65 V ≤ V_CC < 4.5 V, I_OH = −100 mA
−0.1
2
0
V_CC x 0.7
2.4
V_CC − 0.2
2
500
2
5
1
3
1
2
1
2
0.8
V_CC + 1
V_CC x 0.2
V_CC + 1
0.4
0.2
Units
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
Table 4. PIN CAPACITANCE (Note 4)
Symbol
Test
C_OUT
Output Capacitance (DO)
C_IN
Input Capacitance (CS, SK, DI, ORG)
Conditions
V_OUT = 0 V
V_IN = 0 V
Min
Typ
Max
Units
5
pF
5
pF
Table 5. POWER−UP TIMING (Notes 4, 5)
Symbol
Parameter
t_PUR
t_PUW
Power−up to Read Operation
Power−up to Write Operation
Max
Units
1
ms
1
ms
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