CAT93C66_15 Datasheet, PDF (2/13 Pages) ON Semiconductor – 4 kb Microwire Serial CMOS EEPROM

CAT93C66, CAT93W66
Table 1. PIN FUNCTION
Pin Name
Function
CS
Chip Select
SK
Clock Input
DI
Serial Data Input
DO
Serial Data Output
1. ORG Pin available for the CAT93C66 only.
Pin Name
V_CC
GND
ORG (Note 1)
NC
Function
Power Supply
Ground
Memory Organization
No Connection
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Ratings
−65 to +150
Units
°C
Voltage on Any Pin with Respect to Ground (Note 2)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 3. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
Parameter
Min
Units
N_END (Note 4) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
3. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
4. Block Mode, V_CC = 5 V, 25°C.
Table 4. D.C. OPERATING CHARACTERISTICS
(V_CC = +1.8 V to +5.5 V, T_A = −40°C to +125°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
I_CC1
Power Supply Current
f_SK = 1 MHz, V_CC = 5.0 V
(Write)
Min
Max
Units
1
mA
I_CC2
Power Supply Current
f_SK = 1 MHz, V_CC = 5.0 V
(Read)
500
mA
I_SB1
Power Supply Current
V_IN = GND or V_CC,
(Standby) (x8 Mode)
CS = GND ORG = GND
T_A = −40°C to +85°C
T_A = −40°C to +125°C
2
mA
4
I_SB2
Power Supply Current
V_IN = GND or V_CC, CS = GND T_A = −40°C to +85°C
(Standby) (x16 Mode)
ORG = Float or V_CC
T_A = −40°C to +125°C
1
mA
2
I_LI
Input Leakage Current
V_IN = GND to V_CC
T_A = −40°C to +85°C
1
mA
T_A = −40°C to +125°C
2
I_LO
Output Leakage Current V_OUT = GND to V_CC,
CS = GND
T_A = −40°C to +85°C
T_A = −40°C to +125°C
1
mA
2
V_IL1
Input Low Voltage
4.5 V ≤ V_CC < 5.5 V
−0.1
0.8
V
V_IH1
Input High Voltage
4.5 V ≤ V_CC < 5.5 V
2
V_CC + 1
V
V_IL2
Input Low Voltage
1.8 V ≤ V_CC < 4.5 V
0
V_CC x 0.2
V
V_IH2
Input High Voltage
1.8 V ≤ V_CC < 4.5 V
V_CC x 0.7 V_CC + 1
V
V_OL1
Output Low Voltage
4.5 V ≤ V_CC < 5.5 V, I_OL = 2.1 mA
0.4
V
V_OH1
Output High Voltage
4.5 V ≤ V_CC < 5.5 V, I_OH = −400 mA
2.4
V
V_OL2
Output Low Voltage
1.8 V ≤ V_CC < 4.5 V, I_OL = 1 mA
0.2
V
V_OH2
Output High Voltage
1.8 V ≤ V_CC < 4.5 V, I_OH = −100 mA
V_CC − 0.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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