CAT28C16AL20 Datasheet, PDF (2/10 Pages) ON Semiconductor – 16 kb CMOS Parallel EEPROM

A₄−A₁₀
V_CC
CE
OE
WE
A₀−A₃
CAT28C16A
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
HIGH VOLTAGE
GENERATOR
CONTROL
LOGIC
TIMER
DATA POLLING
ADDR. BUFFER
& LATCHES
COLUMN
DECODER
Figure 1. Block Diagram
2,048 x 8
EEPROM
ARRAY
I/O BUFFERS
I/O₀−I/O₇
Table 1. MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
D_OUT
ACTIVE
Byte Write (WE Controlled)
L
H
D_IN
ACTIVE
Byte Write (CE Controlled)
L
H
D_IN
ACTIVE
Standby, and Write Inhibit
H
X
X
High−Z
STANDBY
Read and Write Inhibit
X
H
H
High−Z
ACTIVE
Table 2. CAPACITANCE (T_A = 25°C, f = 1.0 MHz, V_CC = 5 V)
Symbol
Test
Max
Conditions
C_I/O (Note 1)
Input/Output Capacitance
10
C_IN (Note 1)
Input Capacitance
6
1. This parameter is tested initially and after a design or process change that affects the parameter.
V_I/O = 0 V
V_IN = 0 V
Units
pF
pF
Table 3. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
–55 to +125
°C
Storage Temperature
–65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 2)
V_CC with Respect to Ground
Package Power Dissipation Capability (T_A = 25°C)
Lead Soldering Temperature (10 secs)
–2.0 V to +V_CC + 2.0 V
V
−2.0 to +7.0
V
1.0
W
300
°C
Output Short Circuit Current (Note 3)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V_CC + 0.5 V, which may overshoot to V_CC + 2.0 V for periods of less than 20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
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