CAT25M02_16 Datasheet, PDF (2/14 Pages) ON Semiconductor – 2 Mb SPI Serial CMOS EEPROM

CAT25M02
DEVICE MARKINGS
25M02A
AYMZZZ
2MSA
ALYW
SOIC−8 Package
25M02A = Specific Device Code
A = Assembly Site
Y = Year of Production, Last Number
M = Assembly Operation Month
ZZZ = Assembly Lot Number, Last Three Numbers
WLCSP−8 Package
2MSA = Specific Device Code
A = Assembly Site
L = Wafer Lot Number
Y = Year of Production, Last Number
W = Work Week Number
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
–40 to +125
°C
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 4)
Symbol
Parameter
Min
Units
N_END (Notes 2, 3)
Endurance
1,000,000
Program/Erase Cycles
T_DR
Data Retention
100
Years
2. Page Mode, V_CC = 5 V, 25°C.
3. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes located at addresses
4N, 4(N+1), 4(N+2), 4(N+3), in order to benefit from the maximum number of write cycles.
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
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